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Publications
Latest update: 2010-Apr-20

  1. Stranski–Krastanow growth of (112-2)-oriented GaN/AlN quantum dots
    L. Lahourcade, S. Valdueza-Felip, T. Kehagias, G.P. Dimitrakopulos, P. Komninou, E. Monroy
    Appl. Phys. Lett. 94, 111901 (2009)
  2. GaN quantum dots as optical transducers for chemical sensors
    O. Weidemann, P.K. Kandaswamy, E. Monroy, G. Jegert, M. Stutzmann, M. Eickhoff
    Appl. Phys. Lett. 94, 113108 (2009)
  3. GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
    P.K. Kandaswamy, F. Guillot, E. Bellet-Amalric, E. Monroy, L. Nevou, M. Tchernycheva, A. Michon, F.H. Julien, E. Baumann, F.R. Giorgetta, D. Hofstetter, T. Remmele, M. Albrecht, S. Birner, Le Si Dang
    J. Appl. Phys. 104, 093501 (2008)
  4. Interband and intersubband optical characterization of (11-22)-oriented GaN/AlN multiple-quantum-well structures
    L. Lahourcade, P.K. Kandaswamy, J. Renard, P. Ruterana, H. Machhadani, M. Tchernycheva, F.H. Julien, B. Gayral, E. Monroy
    Appl. Phys. Lett. 93, 111906 (2008)
  5. Mg doping and its effect on the semipolar GaN(11-22) growth kinetics
    L. Lahourcade, J. Pernot, A. Wirthmüller, M. P. Chauvat, P. Ruterana, A. Laufer, M. Eickhoff, E. Monroy
    Appl. Phys. Lett. 95, 171908 (2009)
  6. Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots
    J. Renard, P. K. Kandaswamy, E. Monroy, B. Gayral
    Appl. Phys. Lett. 95, 131903 (2009)
  7. PAMBE growth of (112¯2)-oriented GaN/AlN nanostructures on m-sapphire
    L. Lahourcade, J. Renard, P.K. Kandaswamy, B. Gayral, M.P. Chauvat, P. Ruterana, E. Monroy
    Microelectronics Journal 40, 325 (2009)
  8. Polar AlN/GaN interfaces: Structures and energetics
    J. Kioseoglou, E. Kalesaki, L. Lymperakis, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas
    physica status solidi (a) 206, 1892 (2009)
  9. Core models of a-edge threading dislocations in wurtzite III(Al,Ga,In)-nitrides
    J. Kioseoglou, Ph. Komninou, Th. Karakostas
    physica status solidi (a) 206, 1931 (2009)
  10. Strain accommodation and interfacial structure of AlN interlayers in GaN
    G. P. Dimitrakopulos, E. Kalesaki, Ph. Komninou, Th. Kehagias, J. Kioseoglou, Th. Karakostas
    Crystal Research and Technology 44, 1170 (2009)
  11. Photoluminescence polarization properties of single GaN nanowires containing AlxGa1-xN/GaN quantum discs
    L. Rigutti, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin1 F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff, R. Songmuang, F. Fortuna
    Phys. Rev. B 81, 045411 (2010)
  12. Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE
    Th. Kehagias, L. Lahourcade, A. Lotsari, E. Monroy, G.P. Dimitrakopulos
    accepted for publication in physica status solidi (b)
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