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Publications
Latest update: 2011-Jun-03

  1. Stranski–Krastanow growth of (112-2)-oriented GaN/AlN quantum dots
    L. Lahourcade, S. Valdueza-Felip, T. Kehagias, G.P. Dimitrakopulos, P. Komninou, E. Monroy
    Appl. Phys. Lett. 94, 111901 (2009)
  2. GaN quantum dots as optical transducers for chemical sensors
    O. Weidemann, P.K. Kandaswamy, E. Monroy, G. Jegert, M. Stutzmann, M. Eickhoff
    Appl. Phys. Lett. 94, 113108 (2009)
  3. GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
    P.K. Kandaswamy, F. Guillot, E. Bellet-Amalric, E. Monroy, L. Nevou, M. Tchernycheva, A. Michon, F.H. Julien, E. Baumann, F.R. Giorgetta, D. Hofstetter, T. Remmele, M. Albrecht, S. Birner, Le Si Dang
    J. Appl. Phys. 104, 093501 (2008)
  4. Interband and intersubband optical characterization of (11-22)-oriented GaN/AlN multiple-quantum-well structures
    L. Lahourcade, P.K. Kandaswamy, J. Renard, P. Ruterana, H. Machhadani, M. Tchernycheva, F.H. Julien, B. Gayral, E. Monroy
    Appl. Phys. Lett. 93, 111906 (2008)
  5. Mg doping and its effect on the semipolar GaN(11-22) growth kinetics
    L. Lahourcade, J. Pernot, A. Wirthmüller, M. P. Chauvat, P. Ruterana, A. Laufer, M. Eickhoff, E. Monroy
    Appl. Phys. Lett. 95, 171908 (2009)
  6. Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots
    J. Renard, P. K. Kandaswamy, E. Monroy, B. Gayral
    Appl. Phys. Lett. 95, 131903 (2009)
  7. PAMBE growth of (112¯2)-oriented GaN/AlN nanostructures on m-sapphire
    L. Lahourcade, J. Renard, P.K. Kandaswamy, B. Gayral, M.P. Chauvat, P. Ruterana, E. Monroy
    Microelectronics Journal 40, 325 (2009)
  8. Polar AlN/GaN interfaces: Structures and energetics
    J. Kioseoglou, E. Kalesaki, L. Lymperakis, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas
    physica status solidi (a) 206, 1892 (2009)
  9. Core models of a-edge threading dislocations in wurtzite III(Al,Ga,In)-nitrides
    J. Kioseoglou, Ph. Komninou, Th. Karakostas
    physica status solidi (a) 206, 1931 (2009)
  10. Strain accommodation and interfacial structure of AlN interlayers in GaN
    G. P. Dimitrakopulos, E. Kalesaki, Ph. Komninou, Th. Kehagias, J. Kioseoglou, Th. Karakostas
    Crystal Research and Technology 44, 1170 (2009)
  11. Triple-twin domains in Mg doped GaN wurtzite nanowires: Structural and electronic properties of this zinc-blende-like stacking
    J. Arbiol, S. Estrade, J.D. Prades, A. Cirera, F. Furtmayr, C. Stark, A. Laufer, M. Stutzmann, M. Eickhoff, M.H. Gass, A.L. Bleloch, F. Peiro, J.R. Morante
    Nanotechnology 20, 145704 (2009)
  12. P-type doping of semipolar GaN(11-22) by plasma-assisted molecular-beam epitaxy
    A. Das, L. Lahourcade, J. Pernot, S. Valdueza-Felip, P. Ruterana, A.Laufer, M. Eickhoff, E. Monroy
    phys. atat. sol. (c) 7, 1913 (2010)
  13. Photoluminescence polarization properties of single GaN nanowires containing AlxGa1-xN/GaN quantum discs
    L. Rigutti, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin1 F.H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff, R. Songmuang, F. Fortuna
    Phys. Rev. B 81, 045411 (2010)
  14. Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE
    Th. Kehagias, L. Lahourcade, A. Lotsari, E. Monroy, G.P. Dimitrakopulos, Ph. Komninou
    phys. stat. sol. (b) 247, 1637 (2010)
  15. Optical characterization of AlGaN/GaN quantum disc structures in single nanowires
    L. Rigutti, F. Fortuna, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F.H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff
    phys. stat. sol. (c) 7, 2243 (2010)
  16. Indium kinetics during the plasma-assisted molecular-beam epitaxy of semipolar (11-22) InGaN layers
    A. Das, S. Magalhaes , Y. Kotsar , P.K. Kandaswamy, B. Gayral , K. Lorenz , E.J.C. Alves , P. Ruterana, E. Monroy
    Appl. Phys. Lett. 96, 181907 (2010)
  17. Morphology and strain of self-assembled semipolar GaN quantum dots in (11-22) AlN
    G.P. Dimitrakopulos, E. Kalesaki, J. Kioseoglou, Th. Kehagias, A. Lotsari, L. Lahourcade, E. Monroy, I. Häusler, H. Kirmse, W. Neumann, G. Jurczak, T.D. Young, P. Dluzewski, Ph. Komninou, Th. Karakostas
    J. Appl. Phys. 108, 104304 (2010)
  18. Origin of energy dispersion in AlxGa1-xN/GaN nanowire quantum discs with low Al content
    L. Rigutti, J. Teubert, G. Jacopin, F. Fortuna, M. Tchernycheva, A. De Luna Bugallo, F.H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff
    Phys. Rev. B 82, 235308 (2010)
  19. Improved luminescence and thermal stability of semipolar (11-22) InGaN quantum dots
    A. Das, G.P. Dimitrakopulos, Y. Kotsar, A. Lotsari, Th. Kehagias, Ph. Komninou, E. Monroy
    Appl. Phys. Lett. 98, 201911 (2011)
  20. Internal Quantum Efficiency of III-nitride Quantum Dot Superlattices Grown by Plasma-Assisted Molecular-Beam Epitaxy
    Z. Gacevic, A. Das, J. Teubert, Y. Kotsar, P. K. Kandaswamy, Th. Kehagias, T. Koukoula, Ph. Komninou, E. Monroy
    J. Appl. Phys. 109, 103501 (2011)
  21. Growth and characterization of polar (0001) and semipolar (11-22) InGaN/GaN quantum dots
    A. Das, P. Sinha, Y. Kotsar, P. K. Kandaswamy, G. P. Dimitrakopulos, Th. Kehagias, Ph. Komninou, G. Nataf, P. De Mierry, E. Monroy
    J. Crystal Growth 323, 161 (2011)
  22. Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE
    A. Lotsari, G.P. Dimitrakopulos, Th. Kehagias, A. Das, E. Monroy, Ph. Komninou
    Microelectronic Engineering (in press) doi:10.1016/j.mee.2011.03.017 (2011)
  23. Effect of edge threading dislocations on the electronic structure of InN
    E. Kalesaki, J. Kioseoglou, L. Lymperakis, Ph. Komninou and Th. Karakostas
    Appl. Phys. Lett. 98, 072103 (2011)
  24. Electronic structure of 1/6 <20-23> partial dislocations in wurtzite GaN
    J. Kioseoglou, E. Kalesaki, L. Lymperakis, J. Neugebauer, Ph. Komninou, Th. Karakostas
    J. Appl. Phys. 109, 083511 (2011)
  25. GaN nanodiscs embedded in nanowires as optochemical transducers
    J. Teubert, P. Becker, F. Furtmayr, M. Eickhoff
    Nanotechnology 22, 275505 (2011)
  26. Carrier Confinement in GaN/AlxGa1-xN Nanowire Heterostructures for 0 <= x <= 1
    F. Furtmayr, J. Teubert, P. Becker, S. Conesa-Boj, J.R. Morante, J. Arbiol, M. Eickhoff
    submitted to Phys. Rev. B (2011)
  27. Optical properties of wurtzite / zinc-blende heterostructures in GaN nanowires
    G. Jacopin, L. Rigutti, L. Largeau, F. Fortuna, F. Furtmayr, F.H. Julien, M. Eickhoff, M. Tchernycheva
    submitted to J. Appl. Phys. (2011)
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