|
home :: information :: publications
Publications
Latest update: 2010-Apr-20
-
Stranski–Krastanow growth of (112-2)-oriented GaN/AlN quantum dots
L. Lahourcade, S. Valdueza-Felip, T. Kehagias, G.P. Dimitrakopulos, P. Komninou, E. Monroy
Appl. Phys. Lett. 94, 111901 (2009)
-
GaN quantum dots as optical transducers for chemical sensors
O. Weidemann, P.K. Kandaswamy, E. Monroy, G. Jegert, M. Stutzmann, M. Eickhoff
Appl. Phys. Lett. 94, 113108 (2009)
-
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
P.K. Kandaswamy, F. Guillot, E. Bellet-Amalric, E. Monroy, L. Nevou, M. Tchernycheva, A. Michon, F.H. Julien, E. Baumann, F.R. Giorgetta, D. Hofstetter, T. Remmele, M. Albrecht, S. Birner, Le Si Dang
J. Appl. Phys. 104, 093501 (2008)
-
Interband and intersubband optical characterization of (11-22)-oriented GaN/AlN multiple-quantum-well structures
L. Lahourcade, P.K. Kandaswamy, J. Renard, P. Ruterana, H. Machhadani, M. Tchernycheva, F.H. Julien, B. Gayral, E. Monroy
Appl. Phys. Lett. 93, 111906 (2008)
-
Mg doping and its effect on the semipolar GaN(11-22) growth kinetics
L. Lahourcade, J. Pernot, A. Wirthmüller, M. P. Chauvat, P. Ruterana, A. Laufer, M. Eickhoff, E. Monroy
Appl. Phys. Lett. 95, 171908 (2009)
-
Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots
J. Renard, P. K. Kandaswamy, E. Monroy, B. Gayral
Appl. Phys. Lett. 95, 131903 (2009)
-
PAMBE growth of (112¯2)-oriented GaN/AlN nanostructures on m-sapphire
L. Lahourcade, J. Renard, P.K. Kandaswamy, B. Gayral, M.P. Chauvat, P. Ruterana, E. Monroy
Microelectronics Journal 40, 325 (2009)
-
Polar AlN/GaN interfaces: Structures and energetics
J. Kioseoglou, E. Kalesaki, L. Lymperakis, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas
physica status solidi (a) 206, 1892 (2009)
-
Core models of a-edge threading dislocations in wurtzite III(Al,Ga,In)-nitrides
J. Kioseoglou, Ph. Komninou, Th. Karakostas
physica status solidi (a) 206, 1931 (2009)
-
Strain accommodation and interfacial structure of AlN interlayers in GaN
G. P. Dimitrakopulos, E. Kalesaki, Ph. Komninou, Th. Kehagias, J. Kioseoglou, Th. Karakostas
Crystal Research and Technology 44, 1170 (2009)
-
Photoluminescence polarization properties of single GaN nanowires containing AlxGa1-xN/GaN quantum discs
L. Rigutti, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin1 F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff, R. Songmuang, F. Fortuna
Phys. Rev. B 81, 045411 (2010)
-
Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE
Th. Kehagias, L. Lahourcade, A. Lotsari, E. Monroy, G.P. Dimitrakopulos
accepted for publication in physica status solidi (b)
|
|
